Because SRAM is essentially a flipflop gate. It takes at least four transistors to store a single bit in SRAM, some designs use six. And current must continuously flow to keep the transistors in their state, so it's rather power hungry.
One bit of DRAM is just one transistor and one capacitor. Massive density improvements; all the complexity is in the row/column circuitry at the edges of the array. And it only burns power during accesses or refreshes. If you don't need to refresh very often, you can get the power very low. If the array isn't being accessed, the refresh time can be double-digit milliseconds, perhaps triple-digit.
Which of course leads to problems like rowhammer, where rows affected by adjacent accesses don't get additional refreshes like they should (because this has a performance cost -- any cycle spent refreshing is a cycle not spent accessing), and you end up with the RAM reading out different bits than were put in. Which is the most fundamental defect conceivable for a storage device, but the industry is too addicted to performance to tap the brakes and address correctness. Every DDR3/DDR4 chip ever manufactured is defective by design.
A nitpick: if the chip is manufactured in CMOS technology (as it's typically done), then no, current does not have to flow to keep the transistors' state (it's sufficient that a potential difference is maintained), only to change it. There's a tiny leakage current however, which over a few billion transistors adds up.
One bit of DRAM is just one transistor and one capacitor. Massive density improvements; all the complexity is in the row/column circuitry at the edges of the array. And it only burns power during accesses or refreshes. If you don't need to refresh very often, you can get the power very low. If the array isn't being accessed, the refresh time can be double-digit milliseconds, perhaps triple-digit.
Which of course leads to problems like rowhammer, where rows affected by adjacent accesses don't get additional refreshes like they should (because this has a performance cost -- any cycle spent refreshing is a cycle not spent accessing), and you end up with the RAM reading out different bits than were put in. Which is the most fundamental defect conceivable for a storage device, but the industry is too addicted to performance to tap the brakes and address correctness. Every DDR3/DDR4 chip ever manufactured is defective by design.